|KOLAŘÍK Vladimír||ÚPT AV ČR, v.v.i.|
|Spoluautoři MATĚJKA Milan, KRÁTKÝ Stanislav, CHLUMSKÁ Jana, URBÁNEK Michal, HORÁČEK Miroslav, BOK Jan|
This contribution deals with a patterning of thin metallic layers using the masking technique by electron beam lithography. It is mainly concentrated on procedures to prepare finger structure in thin Gold layer on electrically isolated Silicon wafer. Both positive and negative tone resists are used for patterning. The thin layer is structured by the wet etching or by the lift–off technique. The prepared structures are intended to be used as a conductivity sensor for a variety of sensor applications. Patterning of the thin layer is performed by the e–beam writer with shaped rectangular beam BS600 by direct writing (without the glass photo mask). The Gold thin layer is wet etched through the resist mask. Alternatively, the metallic layer is sputtered after the resist mask has been prepared. Then, the required geometry structure is transferred from the resist to the metal layer by the lift–off technique. Besides the main technology process based on the direct–write e–beam lithography, other auxiliary issues are also discussed such as achievable resolution of this technique, stitching and overlay precision of the process, throughput of this approach, issues of the thin layer adhesion on the substrate, thin layer surface protection, inter–operation control and measurement techniques and methods for splitting the wafer on separate sensor pieces.